Vacuum Sintering Furnace factory, Buy good price MIM Sintering Furnace Products

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Tungsten Cemented Carbide Alloys HIP Sinter Furnace and Debind Process with Max.Working Pressure 9.8bar

Max.Working Temp.: 1800℃

Max.Working Pressure: 9.8bar

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2200℃ Max. Temperature Vacuum Heat Treatment Furnace For Material Anealing/quenching/brazing

Temperature Range: 1800℃-2200℃

Safety Protection: Over Temperature Protection

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Rapid Cooling Vacuum Sintering Furnace For Tungsten Carbide / Copper-based Alloy Material

Max.Working Temp.: 1800℃

Max.Working Pressure: 9.8bar

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Silicon Carbide CVD Coating Furnace For Graphite Susceptor Or Etching Ring

Packaging Details: wooden cases

Delivery Time: 5-6monthes

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Horizontal / Vertical Stainless Steel Sic Vacuum Sintering Furnace China Sinter Hip Furnace

Packaging Details: wooden cases

Delivery Time: 5-8 months

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2300℃ Max. Temperature Heat Treatment Furnace For Material Anealing / Quenching / Brazing

Max.Charge Load: 200/500/1500KG

Power Rating: 260/280/360KVA

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Stainless Steel Mim Sinter Hip Furnace Realtime Dynamic Monitoring

Type: Electrical Resistance Furnace

Usage: Sintering Furnace,Heat Treatment Furnace,Vacuum Furnace

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Metal Sintering Furnace For Tungsten Carbide,copper-based Alloy And Other Material

Max.Working Temp.: 1800℃

Max.Working Pressure: 9.8bar

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High-temperature Vacuum Sintering Furnace With Rapid Cooling From 1450℃ To 100℃

Max.Working Temp.: 1800℃

Max.Working Pressure: 9.8bar

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RDE Silicon Carbide Coating Machine CVD Chemical Vapor Deposition Furnace

Effecive Space(mm): 1000*1000*1500

Heating Power(KVA): 300

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Horizontal Vacuum Rapid Cooling Sinter HIP Furnace with 10mpa Pressure 1800C Max Working Temp.

Max.Working Temp.: 1800℃

Max.Working Pressure: 9.8bar

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China CVD Furnace Manufactures , Silicon Carbide Coating Machine

Effecive Space(mm): 1000*1000*1500

Heating Power(KVA): 300

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Vacuum Gas Perssure Rapid Cooling Furnace For Sintering Ceramic Or Cermets

Max.Working Temp.: 1800℃

Max.Working Pressure: 9.8bar

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5518 Partial Pressure Sintering Furnace For Silicon Nitride / Aluminum Nitride / Silicon Carbide

Max.Working Temp.: 1800℃

Max.Working Pressure: 9.8bar

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HTCVD Silicon Carbide CVD SIC Epitaxy Growth Furnace Multiple Temperature Control Zones

Effecive Space(mm): 1000*1000*1500

Heating Power(KVA): 300

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1500C CVD SIC Epitaxy Growth Furnace for Silicon Carbide Growth in 100010001500mm Effective Space

Effecive Space(mm): 1000*1000*1500

Heating Power(KVA): 300

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Zhuzhou Ruideer Metallurgy Equipment Manufacturing Co.,Ltd Products online

Sinter HIP Furnace

Gas Pressure Sintering Furnace