Silicon Carbide Furnace With High Temperature Infrared Measurement Technology

Silicon Carbide Sintering Furnace with Little Temperature Deviation

Silicon Carbide Sintering Furnace With Special High Temperature Infrared Measurement Technology

Description:

The silicon carbide sintering furnace can be used for reaction sintering, pressureless sintering, recrystallization sintering and hot isostatic pressing sintering of SiC ceramic products. The maximum temperature of the equipment can reach 2400 ℃, and it has a debinding and dust removal system, and the debinding and sintering can be completed at one time.

Configuration:

Furnace door: manual push-pull switch furnace door, manual snap-lock furnace door

Furnace shell: full carbon steel / inner stainless steel / full stainless steel

Furnace: soft carbon felt/soft graphite felt/CFC

Heater, muffle: isostatic graphite/fine particle graphite

Vacuum Pumps - Europe/China

PLC: WAGO/Siemens

Human-machine interface: industrial computer (mouse/touch screen control)

Electrical components: Schneider/Siemens

Application:
Carbide ceramic sealing rings, honeycomb ceramics, ceramic membranes, bulletproof sheets, ceramic tubes, etc., as well as other carbide ceramic products and powders such as silicon carbide, boron carbide, and zirconium carbide