2025-08-25
TaC-coated graphite exhibits superior chemical corrosion resistance compared to pure graphite and can operate stably at temperatures up to 2600°C. It is the highest-performing coating for third-generation semiconductor single crystal growth and wafer epitaxial growth. TaC coatings address crystal edge defects and improve crystal growth quality, making it one of the core technologies for achieving "fast, thick, and large" growth.
Currently, chemical vapor deposition (CVD) is the most common method for preparing TaC coatings for semiconductor applications. Recently, the German Institute for Semiconductors and the Japanese TaC Research & Industrialization Organization have demonstrated significant advantages over CVD TaC coatings in the growth of GaN single crystals and PVT growth of SiC single crystals.
China's independently developed multi-phase TaC coating technology, while meeting technical specifications, can significantly reduce the cost of TaC coatings compared to CVD methods. It also offers advantages such as high bonding strength, low thermal stress, excellent sealing, and high-temperature stability.
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