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Aluminum Nitride: The "Game-Changer" in the Semiconductor Industry

2026-10-09

Structure and Properties

Aluminum nitride (AlN) is a crystal dominated by covalent bonds, a hexagonal diamond-like nitride. It features an ultra-wide bandgap (6.2 eV) and an extremely large exciton binding energy, classifying it as a direct-bandgap semiconductor. Its crystal structure resembles that of BeO and SiC. Owing to the highly directional nature of its covalent bonds, AlN delivers outstanding physical and chemical properties such as high thermal conductivity.

CVD Method for Aluminum Nitride Powder

Chemical Vapor Deposition (CVD) is an effective route to produce AlN powder with uniform particle size, high purity and large specific surface area. Volatile aluminum source compounds (aluminum halides or alkylaluminum) and ammonia (NH₃) are introduced into the reaction chamber to react. During the reaction, NH₃ decomposes to supply active nitrogen atoms, and AlN powder is formed via gas-phase deposition.

The advantages of this method include high product purity and fine particle size. Its drawbacks are high production cost, stringent equipment requirements and low throughput. Nevertheless, alkylaluminum is costly and requires special storage and transportation under inert gas protection. As a result, this process remains mainly at the laboratory research stage and has not yet achieved large-scale industrialization.

Applications of Aluminum Nitride in the Semiconductor Industry

Electronic packaging substrates
Semiconductor equipment components
Semiconductor substrate materials
Aluminum nitride thin-film materials

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